Part Number : MDS1660, MDS1660URH ( = AO4468 ) Solidworks 2019 rar.
Power MOSFET 20V, 104mΩ, 2A, Single N-Channel VDSS RDS(on) Max ID Max 20V 104mΩ@ 4.5V 2A 147mΩ@ 2.5V 203mΩ@ 1.8V 540mΩ@ 1.2V ELECTRICAL CONNECTION N-Channel PACKING TYPE: TL MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Mark as Favorite. Automotive Power MOSFET. 20V 3.2A 80 mOhm Single N-Channel SOT-23, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. Leading Planar Technolgy for Low Gate Charge / Fast Switching. 2.5 V rated for Low Voltage Gate Drive. SOT-23 Surface Mount For Small Footprint (3 mm x 3 mm). As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. Applied Filters: Semiconductors Discrete Semiconductors Transistors MOSFET. Transistor Polarity = N-Channel Id - Continuous Drain Current = 2 A Vds - Drain-Source Breakdown Voltage = 60 V.
Yugioh arc v tag force rom. Function : SMD IC / 30V 11.2A power driver MOSFET
2a Mosfet On A Board
Package : SOP 8 Pin
Manufactueres : Magnachip
Spcolumn crack. Image :
Description
The MDS1660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Pinout
MDS1660 Datasheet
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